CS18N20A4R mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanc.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
.
CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
200
V
18
A
100
W
0.12
Ω
performance and enhance the .
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